n2 amps 600volts n-channel mosfet description the et2N60 nceannel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switchi ng applications such as switching regulators, switchin g converters, solenoid, motor drivers, relay drivers . features r ds(on) = 5.00@v gs = 10 v low gate charge ( typical 9nc) high ruggedness fast switching capability avalanche energy specified improved dv/dt capability symbol absolute maximum ratings (t c =25 ,unless otherwise specified) ratings parameter symbol to220 to220f to251 to252 units drainsource voltage v dss 600 v gatesource voltage v gss 30 v t c =25 2.0 2.0 1.9 a drain currenet continuous t c =100 i d 1.35 1.35 1.14 a drain current pulsed (note 1) i dp 8 8 7.6 a repetitive (note 1) e ar 5.55 4.4 mj avalanche energy single pulse (note e as 130 120 mj peak diode recovery dv/dt (note 3) dv/dt 4 .5 v/ns total power dissipation t c =25 p d 55.5 23.6 44 w beijing estek electronics co.,ltd 1 2N60
derate above 25 0.44 0.19 0.35 w/ junction temperature t j +150 storage temperature t stg 55~+150 drain current limited by maximum junction temperatu re. thermal characteristics ratings units parameter symbol to220 to220f to251 to252 thermal resistance junctionambient r thja 62.5 50 110 thermal resistance, casetosink typ. r thcs 0.5 thermal resistance junctioncase r thjc 2.32 5.5 2.87 /w electrical characteristics t j =25 ,unless otherwise specified. 1. repetitive rating : pulse width limited by maxim um junction temperature 2. l = 60 mh, i as = 2.0 a, v dd = 50v, r g = 25 , starting tj = 25c 3. i sd 2.0 a, di/dt 200a/ s, v dd bv dss , starting tj = 25c parameter symbol test conditions min typ max units off characteristics drainsource breakdown voltage bv dss v gs =0v,i d =250a 600 v v ds =600v,v gs =0v 1 a zero gate voltage drain current i dss v ds =480v,t c =125 10 a forward v gs =30v,v ds =0v 100 na gatebody leakage current reverse i gss v gs =30v,v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a 0.7 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drainsource onresistance r ds(on) v ds =10v, i d =1.0a(to220,to220f) i d =0.95a(to251,to252) 4.1 5.0 dynamic characteristics input capacitance c iss 200 pf output capacitance c oss 20 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1mh z 4 pf switching characteristics turnon delay time t d(on) 10 ns rise time t r 25 ns turnoff delay time t d(off) 25 ns fall time t f v dd =300v,i d =2.0a, r g =25 (note 4, 5) 30 ns total gate charge q g 9 nc gatesource charge q gs 1.5 nc gatedrain charge q gd v ds =480v, i d =2.0a v gs =10v (note 4, 5) 4.0 nc drain-source diode characteristics drainsource diode forward voltage v sd v gs =0v, i sd =2.0a(to220,to220f) i sd = 0.95 a (to251,to252) 1.4 v to220,to220f 2.0 continuous drainsource current i sd to251, to252 1.9 a to220,to220f 8.0 pulsed drainsource current i sm to251, to252 7.6 a reverse recovery time t rr 230 ns reverse recovery charge q rr i sd =2.0a, di sd /dt=100a/s (note 4) 1.0 c beijing estek electronics co.,ltd 2 2N60
4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics beijing estek electronics co.,ltd 3 2N60
typical characteristics (continued) figure 9-2. maximum safe operating area for to220f figure 9-1. maximum safe operating area for to220 figure 9-3. maximum safe operating area for to251, to252 figure 10. maximum drain current vs case temperature to220,to220f to251,to252 beijing estek electronics co.,ltd 4 2N60
typical characteristics (continued) figure 11-1. transient thermal response curve to220 figure 11 - 2 . transient thermal response curve for t o220f figure 11 - 3 . transient thermal response curve for t o251/ t o252 beijing estek electronics co.,ltd 5 2N60
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